Published in
Institute of Electrical and Electronics Engineers, IEEE Journal of the Electron Devices Society, (6), p. 627-632, 2018
DOI: 10.1109/jeds.2018.2833504
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Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall
Journal article published in 2018 by
Mei Yuan 
,
Yi-Ting Tseng,
Po-Hsun Chen ,
Hang Zhou ,
Chih-Cheng Shih ,
Hui-Chun Huang,
Ting-Chang Chang ,
Xiaole Cui ,
Xinnan Lin,
Shengdong Zhang
,
Yi-Ting Tseng,
Po-Hsun Chen ,
Hang Zhou ,
Chih-Cheng Shih ,
Hui-Chun Huang,
Ting-Chang Chang ,
Xiaole Cui ,
Xinnan Lin,
Shengdong Zhang
This paper is made freely available by the publisher.
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