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American Institute of Physics, Journal of Applied Physics, 16(123), p. 161539

DOI: 10.1063/1.4995491

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In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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