Published in
American Institute of Physics, AIP Advances, 7(8), p. 075207
DOI: 10.1063/1.5033348
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Electronic properties of GaSe/MoS2 and GaS/MoSe2 heterojunctions from first principles calculations
Journal article published in 2018 by
Khang D. Pham,
Huynh V. Phuc,
Nguyen N. Hieu 
,
Bui D. Hoi,
Chuong V. Nguyen
,
Bui D. Hoi,
Chuong V. Nguyen
This paper is made freely available by the publisher.
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