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Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 6(65), p. 2446-2453, 2018

DOI: 10.1109/ted.2018.2828410

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Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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