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American Chemical Society, Chemistry of Materials, 17(29), p. 7401-7407, 2017

DOI: 10.1021/acs.chemmater.7b02346

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Dopant Induced Impurity Bands and Carrier Concentration Control for Thermoelectric Enhancement in p-Type Cr2Ge2Te6

This paper is available in a repository.
This paper is available in a repository.

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