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Nature Research, Scientific Reports, 1(5), 2015

DOI: 10.1038/srep09446

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Reversible Conversion of Dominant Polarity in Ambipolar Polymer/Graphene Oxide Hybrids

Journal article published in 2015 by Ye Zhou ORCID, Su-Ting Han, Prashant Sonar ORCID, Xinlei Ma, Xinlei, Jihua Chen ORCID, Zijian Zheng, V. A. L. Roy
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

AbstractThe possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.