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Elsevier, Applied Surface Science, (159-160), p. 498-502, 2000

DOI: 10.1016/s0169-4332(00)00090-8

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Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures

Journal article published in 2000 by J. Mori, H. Asahi, M. Fudeta, Noh Jh, J. H. Noh, D. Watanabe, S. Matsuda, K. Asami, Y. Narukawa, Y. Kawakami, Sg Fujita, T. Kaneko, S. Gonda
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

GaP/InP short period superlattices (SLs) are grown on GaAs (311)A substrates by gas source molecular beam epitaxy (MBE). Scanning tunneling microscopy/spectroscopy (STM/STS) measurements show that the quantum dot (QD) structures are self-formed with a lateral density of ∼1011 cm−2. Growth temperature dependence of self-formed structures is studied with STM/STS and clear temperature dependence is observed. Optimum growth temperature is about 460°C. Time-resolved photoluminescence (PL) spectroscopy measurement on the multilayer QD (MQD) structures shows that the PL decay time strongly depends on emission energy and temperature, and ranges from 0.1 to 2.5 ns, which can be explained by considering the tunneling effect of carriers between QDs.