Published in
American Institute of Physics, AIP Advances, 6(8), p. 065015
DOI: 10.1063/1.5036809
Links
Tools
Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization
Journal article published in 2018 by
Alexander D. Mottram,
Pichaya Pattanasattayavong 
,
Ivan Isakov ,
Gwen Wyatt-Moon ,
Hendrik Faber ,
Yen-Hung Lin ,
Thomas D. Anthopoulos
,
Ivan Isakov ,
Gwen Wyatt-Moon ,
Hendrik Faber ,
Yen-Hung Lin ,
Thomas D. Anthopoulos
This paper is made freely available by the publisher.
Full text: Download
Preprint: archiving forbidden
Data provided by 