Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 6(38), p. 705-707, 2017
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Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs
Journal article published in 2017 by
Chien-Yu Lin,
Ting-Chang Chang 
,
Kuan-Ju Liu,
Li-Hui Chen,
Jyun-Yu Tsai,
Ching-En Chen,
Ying-Hsin Lu,
Hsi-Wen Liu,
Jih-Chien Liao,
Kuan-Chang Chang
,
Kuan-Ju Liu,
Li-Hui Chen,
Jyun-Yu Tsai,
Ching-En Chen,
Ying-Hsin Lu,
Hsi-Wen Liu,
Jih-Chien Liao,
Kuan-Chang Chang
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