All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer
Journal article published in 2018 by
Man Hoi Wong 
,
Ken Goto,
Yoji Morikawa,
Akito Kuramata,
Shigenobu Yamakoshi,
Hisashi Murakami,
Yoshinao Kumagai,
Masataka Higashiwaki
,
Ken Goto,
Yoji Morikawa,
Akito Kuramata,
Shigenobu Yamakoshi,
Hisashi Murakami,
Yoshinao Kumagai,
Masataka Higashiwaki
This paper is made freely available by the publisher.
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