Published in
American Physical Society, Physical Review Applied, 3(8), 2017
DOI: 10.1103/physrevapplied.8.034017
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Impact of Layer Alignment on the Behavior of MoS2−ZrS2 Tunnel Field-Effect Transistors: An Ab Initio Study
Journal article published in 2017 by
Anh Khoa Augustin Lu,
Michel Houssa 
,
Mathieu Luisier,
Geoffrey Pourtois
,
Mathieu Luisier,
Geoffrey Pourtois
This paper is available in a repository.
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