Published in
American Institute of Physics, Journal of Applied Physics, 23(122), p. 234505
DOI: 10.1063/1.4986434
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The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
Journal article published in 2017 by
M. A. Hopkins,
D. W. E. Allsopp 
,
M. J. Kappers,
R. A. Oliver ,
C. J. Humphreys
,
M. J. Kappers,
R. A. Oliver ,
C. J. Humphreys
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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