Published in
American Institute of Physics, Journal of Applied Physics, 15(119), p. 155701
DOI: 10.1063/1.4946828
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Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state
Journal article published in 2016 by
M. Lamprecht,
C. Grund,
B. Neuschl,
K. Thonke 
,
Z. Bryan,
R. Collazo,
Z. Sitar
,
Z. Bryan,
R. Collazo,
Z. Sitar
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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