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IOP Publishing, Japanese Journal of Applied Physics, 4S(57), p. 04FE10, 2018

DOI: 10.7567/jjap.57.04fe10

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Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer

Journal article published in 2018 by Sridhar Chandrasekaran ORCID, Firman Mangasa Simanjuntak, Tseung-Yuen Tseng ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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