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MDPI, Sensors, 9(14), p. 16869-16880, 2014

DOI: 10.3390/s140916869

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A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position

Journal article published in 2014 by Kyriaki Manoli, Liviu Mihai Dumitru, Mohammad Yusuf Mulla, Maria Magliulo, Di Cinzia, Cinzia Di Franco, Cinzia Franco, Maria Vittoria Santacroce, Gaetano Scamarcio ORCID, Luisa Torsi
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. The OTFT-based sensor responses were evaluated with static and transient current measurements. A comparison between the different architectures and the relative organic semiconductor was made.