AbstractBottom-gate amorphous silicon thin-film transistors were fabricated on a polyethylene terephthalate substrate. The maximum processing temperature was 100°C. The transistor characteristics are comparable, although still inferior, to those of standard amorphous silicon transistors fabricated on glass substrates. To obtain these characteristics, an extended anneal the processing temperature was required. The devices were fabricated using separately optimized low-temperature active layer, contact layer and gate dielectric layer. To achieve good electronic properties for these layers, hydrogen dilution was required.