Published in

American Institute of Physics, Applied Physics Letters, 2(110), p. 022105

DOI: 10.1063/1.4974050

Links

Tools

Export citation

Search in Google Scholar

Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101¯1) semipolar GaN template

Journal article published in 2017 by Yueliang Li, Haoyuan Qi ORCID, Tobias Meisch, Matthias Hocker, Klaus Thonke ORCID, Ferdinand Scholz ORCID, Ute Kaiser
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO