Published in
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
DOI: 10.1109/sispad.2016.7605197
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Comparison of atomistic quantum transport and numerical device simulation for carbon nanotube field-effect transistors
Proceedings article published in 2016 by
Florian Fuchs,
Andreas Zienert,
Sven Mothes,
Martin Claus,
Sibylle Gemming,
Jorg Schuster 
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