Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 5(34), p. 051208
DOI: 10.1116/1.4963064
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Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates
Journal article published in 2016 by
Fan Ren,
Stephen J. Pearton,
Shihyun Ahn,
Yi-Hsuan Lin,
Francisco Machuca,
Robert Weiss,
Alex Welsh,
Martha R. McCartney,
David J. Smith,
Ivan I. Kravchenko
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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