Published in

Institute of Electrical and Electronics Engineers, IEEE Transactions on Semiconductor Manufacturing, 4(29), p. 343-348, 2016

DOI: 10.1109/tsm.2016.2600371

Links

Tools

Export citation

Search in Google Scholar

Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO