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American Chemical Society, Crystal Growth and Design, 9(16), p. 5136-5140, 2016

DOI: 10.1021/acs.cgd.6b00711

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Characterization of V-Shaped Defects Formed during the 4H-SiC Solution Growth by Transmission Electron Microscopy and X-ray Topography Analysis

Journal article published in 2016 by Shiyu Xiao, Shunta Harada, Kenta Murayama, Toru Ujihara ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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