Published in
American Institute of Physics, APL Materials, 1(6), p. 016103
DOI: 10.1063/1.5000532
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Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si
Journal article published in 2018 by
Jae-Phil Shim,
Seong Kwang Kim,
Hansung Kim 
,
Gunwu Ju,
Heejeong Lim,
SangHyeon Kim,
Hyung-Jun Kim
,
Gunwu Ju,
Heejeong Lim,
SangHyeon Kim,
Hyung-Jun Kim
This paper is made freely available by the publisher.
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