Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Nuclear Science, 1(65), p. 326-330, 2018
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The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops
Journal article published in 2018 by
D. R. Ball 
,
M. L. Alles,
J. S. Kauppila ,
R. C. Harrington ,
J. A. Maharrey ,
P. Nsengiyumva ,
T. D. Haeffner,
J. D. Rowe,
A. L. Sternberg ,
E. X. Zhang ,
B. L. Bhuva ,
L. W. Massengill
,
M. L. Alles,
J. S. Kauppila ,
R. C. Harrington ,
J. A. Maharrey ,
P. Nsengiyumva ,
T. D. Haeffner,
J. D. Rowe,
A. L. Sternberg ,
E. X. Zhang ,
B. L. Bhuva ,
L. W. Massengill
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