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American Institute of Physics, Applied Physics Letters, 25(98), p. 251913

DOI: 10.1063/1.3600643

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30-band k*p method for quantum semiconductor heterostructures

Journal article published in 2011 by S. Boyer-Richard ORCID, Soline Richard, Faycal Raouafi, Alexandre Bondi, Laurent Pedesseau, Claudine Katan ORCID, Jean-Marc Jancu, Jacky Even ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We illustrate how the linear combination of zone center bulk bands combined with the full-zone k*p method can be used to accurately compute the electronic states in semiconductor nanostructures. To this end we consider a recently developed 30-band model which carefully reproduces atomistic calculations and experimental results of bulk semiconductors. The present approach is particularly suited both for short-period superlattices and large nanostructures where a three-dimensional electronic structure is required. This is illustrated by investigating ultrathin GaAs/ AlAs superlattices.