2060105010051 ; 工程與系統科學系 ; Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat.Nanotechnol.2006, 7, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic-aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ~1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield.