Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Nuclear Science, 1(65), p. 46-52, 2018
Links
Tools
Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric
Journal article published in 2018 by
Maruf A. Bhuiyan 
,
Hong Zhou,
Sung-Jae Chang ,
Xiabing Lou,
Xian Gong,
Rong Jiang ,
Huiqi Gong ,
En Xia Zhang ,
Chul-Ho Won,
Jong-Won Lim,
Jung-Hee Lee ,
Roy G. Gordon ,
Robert A. Reed,
Daniel M. Fleetwood ,
Peide Ye
and other authors.
,
Hong Zhou,
Sung-Jae Chang ,
Xiabing Lou,
Xian Gong,
Rong Jiang ,
Huiqi Gong ,
En Xia Zhang ,
Chul-Ho Won,
Jong-Won Lim,
Jung-Hee Lee ,
Roy G. Gordon ,
Robert A. Reed,
Daniel M. Fleetwood ,
Peide Ye
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 