Published in
Elsevier, Microelectronics Reliability, (88-90), p. 577-583, 2018
DOI: 10.1016/j.microrel.2018.07.144
Links
Tools
Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Postprint:
archiving forbidden
Published version:
archiving forbidden
Data provided by 