Shoichiro Imanishi
0000-0002-2168-5892
6 papers found
Refreshing results…
MOSFETs on (110) C–H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O3
Publisher's Note: “Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator” [Appl. Phys. Lett. 116, 212103 (2020)]
Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs with Regrown p++-Diamond Ohmic Contacts
3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
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