Dong-Sing Wuu
National Chung Hsing University
15 papers found
Refreshing results…
85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
Download from doi.orgAlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment
Download from doi.orgEffect of Hydrogen Content in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells
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