Deepthi Cingu
0000-0002-3042-7289
imec
4 papers found
Refreshing results…
1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
Route Toward Commercially Manufacturable Vertical GaN Devices
Reliability of p-GaN Gate HEMTs in Reverse Conduction
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