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Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices
Download from aip.scitation.orgGrowth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration
Download from doi.orgMetal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN
Download from aip.scitation.orgGreen semipolar III-nitride light-emitting diodes grown by limited area epitaxy
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