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Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
UploadScaling Effects on Single-Event Transients in InGaAs FinFETs
UploadDegradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors
Download from aip.scitation.orgThermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
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