Ivana Capan
www.irb.hr
0000-0002-8550-6451
Institut Ruder Boskovic
2 papers found
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Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes
Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study
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