Kevin J. Chen
Hong Kong University of Science and Technology
167 papers found
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High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
Download from www.researchgate.netDC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
Download from www.researchgate.netEnhancement-mode AlGaN/GaN HEMTs on silicon substrate
Download from www.researchgate.netFabrication of suspended GaN microstructures using GaN‐on‐patterned‐silicon (GPS) technique
Download from www.researchgate.netIsoelectronic indium-surfactant-doped Al0.3Ga0.7N/GaN high electron mobility transistors
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