nano Online
DOI: 10.1515/nano.11671_2015.163
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Abstract In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail. PACS: 61.46.Km, 81.07.Gf, 68.37.Lp.