Published in
American Institute of Physics, Journal of Applied Physics, 12(123), p. 125104
DOI: 10.1063/1.5022558
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Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy
Journal article published in 2018 by
F. Stumpf,
A. A. Abu Quba,
P. Singer,
M. Rumler,
N. Cherkashin 
,
S. Schamm-Chardon ,
R. Cours,
M. Rommel
,
S. Schamm-Chardon ,
R. Cours,
M. Rommel
This paper was not found in any repository, but could be made available legally by the author.
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