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American Scientific Publishers, Science of Advanced Materials, 5(10), p. 632-635

DOI: 10.1166/sam.2018.3136

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Characteristics of InGaP/InGaAs Pseudomophic Field-Effect Transistors with Modulated InGaAs Doping Channels

Journal article published in 2018 by Jung-Hui Tsai, Yi-Ting Chao, Pao-Sheng Lin, Syuan-Hao Liou, Wen-Chau Liu
Distributing this paper is prohibited by the publisher
Distributing this paper is prohibited by the publisher

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