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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
DOI: 10.1109/iciprm.2016.7528649
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Fabrication and characterization of InGaAs fin structure high electron mobility transistors
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