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American Institute of Physics, AIP Advances, 8(6), p. 085106

DOI: 10.1063/1.4961025

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Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Journal article published in 2016 by David Kohen, Xuan Sang Nguyen ORCID, Sachin Yadav, Annie Kumar, Riko I. Made ORCID, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee ORCID, Kenneth Eng Kian Lee, Yee Chia Yeo ORCID, Soon Fatt Yoon, Eugene A. Fitzgerald ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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