Published in
American Institute of Physics, AIP Advances, 8(6), p. 085106
DOI: 10.1063/1.4961025
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Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
Journal article published in 2016 by
David Kohen,
Xuan Sang Nguyen 
,
Sachin Yadav,
Annie Kumar,
Riko I. Made ,
Christopher Heidelberger,
Xiao Gong,
Kwang Hong Lee ,
Kenneth Eng Kian Lee,
Yee Chia Yeo ,
Soon Fatt Yoon,
Eugene A. Fitzgerald
,
Sachin Yadav,
Annie Kumar,
Riko I. Made ,
Christopher Heidelberger,
Xiao Gong,
Kwang Hong Lee ,
Kenneth Eng Kian Lee,
Yee Chia Yeo ,
Soon Fatt Yoon,
Eugene A. Fitzgerald
This paper is made freely available by the publisher.
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