Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 9(64), p. 3616-3621, 2017
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Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs
Journal article published in 2017 by
Matteo Borga 
,
Matteo Meneghini ,
Isabella Rossetto ,
Steve Stoffels,
Niels Posthuma,
Marleen Van Hove,
Denis Marcon,
Stefaan Decoutere,
Gaudenzio Meneghesso ,
Enrico Zanoni
,
Matteo Meneghini ,
Isabella Rossetto ,
Steve Stoffels,
Niels Posthuma,
Marleen Van Hove,
Denis Marcon,
Stefaan Decoutere,
Gaudenzio Meneghesso ,
Enrico Zanoni
This paper is available in a repository.
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