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IOP Publishing, Chinese Physics B, 11(26), p. 116802

DOI: 10.1088/1674-1056/26/11/116802

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Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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