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Royal Society of Chemistry, Nanoscale, 40(9), p. 15278-15285, 2017

DOI: 10.1039/c7nr05582j

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Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

Journal article published in 2017 by Ja-Young Seo, Jaeho Choi, Huo-Seon Kim, Jaegyeom Kim, June-Mo Yang, Can Cuhadar, Ji Su Han, Seung-Joo Kim, Donghwa Lee ORCID, Ho Won Jang ORCID, Nam-Gyu Park ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

2D halide perovskite is promising material for reliable waferscale resistive memory even working at high temperature of 87 °C.