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Spin injection into semiconductors : the role of Fe/Al[sub x]Ga[sub 1-x]As interface

This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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Abstract

The influence of the growth and post-growth annealing temperatures of Fe/Al{sub x}Ga{sub 1-x}As-based spin light-emitting diodes (LEDs) on the spin injection efficiency is discussed. The extent of interfacial reactions during molecular beam epitaxial growth of Fe on GaAs was determined from in-situ x-ray photoelectron spectroscopy studies. The Fe/GaAs interface results in {