The objective of this work was to investigate the electrical properties of electrodeposited Cu/Cu2O interfaces in dark conditions. Cuprous oxide is a p-type semiconductor with application in various devices as metal base transistors, and it is very important to obtain good ohmic contacts to this electronic material. The Cu/Cu2O structures were prepared from a single bath on Si substrates by electing a specific potential for each electrodeposited layer. The electrical characterization allowed the formation of reproducible interfaces with contact resistances of 2.1 MΩ/cm2 and the determination of the resistivity of the semiconductor oxide at values of 2 x 1010 Ω.cm.