The Electrochemical Society, ECS Transactions, 2(6), p. 355-366, 2007
DOI: 10.1149/1.2731203
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A model of porous structure growth in semiconductors based on propagation of pores along the <111>A directions has been developed. The model predicts that pores originating at a surface pit lead to porous domains with a truncated tetrahedral shape. SEM and TEM were used to examine cross- sections of n-InP electrodes in the early stages of anodization in aqueous KOH and showed that pores propagate along the <111>A directions. Domain outlines observed in both TEM and SEM images are in excellent agreement with the model. The model is further supported by plan-view TEM and surface SEM images. Quantitative measurements of aspect ratios of the observed domains are in excellent agreement with the predicted values.