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Advanced Etch Technology for Nanopatterning II

DOI: 10.1117/12.2010685

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Tall FIN formation for FINFET devices of 20nm and beyond using multi-cycles of passivation and etch processes

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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