Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers
Proceedings article published in 2013 by
Oleksandr V. Bilousov,
Joan J. Carvajal,
Colm O'Dwyer 
,
Xavier Mateos,
Francesc Díaz,
Magdalena Aguiló
,
Xavier Mateos,
Francesc Díaz,
Magdalena Aguiló
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