Published in
2011 International Semiconductor Device Research Symposium (ISDRS)
DOI: 10.1109/isdrs.2011.6135220
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Modeling the charge transport and degradation in HfO2 dielectric for reliability improvement and life-time predictions in logic and memory devices
Proceedings article published in 2011 by
Andrea Padovani,
Luca Larcher,
Luca Vandelli,
Onofrio Pirrotta,
Paolo Pavan 
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