Published in
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
DOI: 10.1109/essderc.2012.6343395
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Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT
Proceedings article published in 2012 by
S. G. Khalil,
R. Chu 
,
R. Li,
D. Wong,
S. Newell,
X. Chen,
M. Chen,
D. Zehnder,
S. Kim,
A. Corrion,
B. Hughes,
K. Boutros,
C. Namuduri
,
R. Li,
D. Wong,
S. Newell,
X. Chen,
M. Chen,
D. Zehnder,
S. Kim,
A. Corrion,
B. Hughes,
K. Boutros,
C. Namuduri
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