Published in
MAIK Nauka/Interperiodica, Semiconductors, 2(50), p. 244-248
DOI: 10.1134/s1063782616020263
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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
Journal article published in 2016 by
V. G. Tikhomirov,
V. E. Zemlyakov,
V. V. Volkov,
Y.-A. M. Parnes,
V. N. Vyuginov,
W. V. Lundin,
A. V. Sakharov,
E. E. Zavarin,
A. F. Tsatsulnikov,
N. A. Cherkashin 
,
M. N. Mizerov,
V. M. Ustinov
,
M. N. Mizerov,
V. M. Ustinov
This paper was not found in any repository, but could be made available legally by the author.
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